Formulas and parameters were used in the modeling:
VT=VT_ref*(Tcell_K/Tref_K);
I0_T=I0_ref*((Tcell_K/Tref_K)^3)*exp((EgRef/(k1*Tref_K))-(E_g/(k1*Tcell_K)))
Rsh=Rsh_ref*Sref/S
Diode characteristic
Id=I0*[exp(Vd/VT) -1]
where: Id = diode current (A) Vd = diode voltage (V) I0 = diode saturation
current (A)
VT = temperature voltage = k*Tcell_K/q*nI*Ncell*Nser
Tcell_K = cell temperature (K),
k = Boltzman constant = 1.3806e-23 J.K^-1
q = electron charge = 1.6022e-19 C
nI = diode ideality factor
Ncell= number of series-connected cells per module
Nser = number of series-connected modules per string
ki=0.0032
q=1.6e-19
K=1.38e-23
n=1.3
Eg0=1.1
Rs=0.221
Rsh=415.405
Tn=298
Voc=32.9
Isc=8.21
Ns=54
